all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! data sheet 1 of 9 rev. 03.3, 2016-06-21 ptfc260202fc thermally-enhanced high power rf ldmos fet 25 w, 28 v, 2495 C 2690 mhz description the ptfc260202fc integrates two independent 10-watt ldmos fets and is designed for use in cellular amplifer applications in the 2495 to 2690 mhz frequency band. manufactured with infneon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. ptfc260202fc package h-37248-4 features ? broadband input matching ? typical cw performance, 2620 mhz, 28 v - output power at p 1db = 25 w - effciency = 57% - linear gain = 19.4 db ? capable of handling 10:1 vswr @28 v, 25 w (cw) output power ? integrated esd protection ? human body model class 1b (per ansi/esda/ jedec js-001) ? low thermal resistance ? pb-free and rohs compliant rf characteristics two-carrier wcdma specifcations (tested in infneon test fxture) v dd = 28 v, i dq = 170 ma, p out = 5 w avg, ? 1 = 2615 mhz, ? 2 = 2625 mhz, 3gpp signal, channel bandwidth = 3.84 mhz, peak/average = 8 db @ 0.01% ccdf characteristic symbol min typ max unit linear gain g ps 19 20 db drain effciency h d 27.5 30 % intermodulation distortion imd C31.5 C30 dbc 0 10 20 30 40 50 15 16 17 18 19 20 30 31 32 33 34 35 36 37 38 39 40 drain efficiency (%) gain (db) output power (dbm) two - carrier wcdma 3gpp drive - up v dd = 28 v, i dq = 0.17 a, ? = 2620 mhz, 3gpp wcdma, par = 8 db, 10 mhz carrier spacing, bw 3.84 mhz efficiency gain
data sheet 2 of 9 rev. 03.3, 2016-06-21 ptfc260202fc dc characteristics (single side) characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v( br)dss 65 v drain leakage current v ds = 28 v, v gs = 0 v i dss 1 a v ds = 63 v, v gs = 0 v i dss 10 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) 0.05 w operating gate voltage v ds = 28 v, i dq = 1.35 a v gs 2.3 2.8 3.3 v gate leakage current v gs = 10 v, v ds = 0 v i gss 1 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs C6 to +10 v operating voltage v dd 0 to +32 v junction temperature t j 225 c storage temperature range t stg C65 to +150 c thermal resistance (t case = 70c, 25 w cw) r qjc 2.2 c/w ordering information type and version order code package description shipping ptfc260202fc v1 r0 ptfc260202fcv1r0xtma1 h-37248-4, earless fange tape & reel, 50 pcs ptfc260202fc v1 r250 PTFC260202FCV1R250xtma1 h-37248-4, earless fange tape & reel, 250 pcs
ptfc260202fc data sheet 3 of 9 rev. 03.3, 2016-06-21 typical performance (data taken in a production test fxture) 0 5 10 15 20 25 30 35 40 45 - 60 - 55 - 50 - 45 - 40 - 35 - 30 - 25 - 20 - 15 30 31 32 33 34 35 36 37 38 39 40 drain efficiency (%) imd & acpr (dbc) output power (dbm) two - carrier wcdma 3gpp drive - up v dd = 28 v, i dq = 0.17 a, ? = 2620 mhz, 3gpp wcdma, par = 8 db, 10 mhz carrier spacing, bw 3.84 mhz imd low imd up acpr efficiency - 40 - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 0 5 10 15 20 25 30 35 40 2480 2520 2560 2600 2640 2680 2720 gain (db) / efficiency (%) frequency (mhz) single - carrier wcdma 3ggp broadband v dd = 28 v, i dq = 0.17 a, p out = 4 w, par = 10 db gain efficiency irl acpr imd (dbc) / acpr (dbc) 0 10 20 30 40 50 60 70 14 15 16 17 18 19 20 21 35 36 37 38 39 40 41 42 43 44 45 drain efficiency (%) gain (db) output power (dbm) power sweep, cw gain & efficiency vs. output power v dd = 28 v, i dq = 0.17 a, ? = 2620 mhz efficiency gain - 40 - 35 - 30 - 25 - 20 30 31 32 33 34 35 36 37 38 39 40 imd (dbc) output power (dbm) two - carrier wcdma 3gpp drive - up v dd = 28 v, i dq = 0.17 a, ? = 2620 mhz, 3gpp wcdma, par = 8 db, 10 mhz carrier spacing, bw 3.84 mhz 2690 upper 2690 lower 2496 upper 2496 lower
data sheet 4 of 9 rev. 03.3, 2016-06-21 ptfc260202fc broadband circuit impedance frequency z source w z load w mhz r jx r jx 2495 25.5 C18.0 8.4 C11.1 2533 24.7 C17.9 8.3 C11.2 2570 24.0 C17.8 8.3 C11.3 2620 23.1 C17.6 8.0 C11.4 2655 22.5 C17.4 7.9 C11.5 2690 22.0 C17.1 7.6 C11.6 reference circuit reference circuit input schematic for ? = 2680 mhz tl 101 tl 102 tl 103 tl 104 tl 105 tl 106 tl 107 tl 108 tl 109 tl 110 tl 111 c 101 15 pf 1 2 3 tl 112 r 101 10 ohm 1 2 3 tl 113 tl 114 tl 115 tl 116 tl 117 tl 118 tl 119 tl 120 tl 121 tl 122 1 2 3 tl 123 tl 124 tl 125 tl 126 c102 220000 pf 1 2 3 tl 127 c 103 10000000 pf 1 2 3 tl 128 r 102 10 ohm 1 2 3 tl 129 c 104 1 . 2 pf 1 2 3 4 tl 130 c105 15 pf c106 15 pf c 107 10000000 pf c108 220000 pf 1 2 3 tl 131 tl 132 tl 133 rf_in r 103 4 . 7 ohm r 104 4 . 7 ohm c 109 15 pf 1 2 3 tl 134 tl 135 tl 136 tl 137 tl 138 tl 139 tl 140 tl 141 tl 142 tl 143 tl 144 tl 145 tl 146 tl 147 tl 148 tl 149 tl 150 c 2 6 0 2 0 2 f c _ b d i n _ 0 9 - 1 3 - 2 0 1 2 gate _dut pin g1 gate_dut pin g 2 r = 3 . 66 h = 30 mil ro / ro 4350 z source z load g 1 d 1 g 2 s d 2
ptfc260202fc data sheet 5 of 9 rev. 03.3, 2016-06-21 reference circuit reference circuit output schematic for ? = 2680 mhz tl 201 tl 202 tl 203 tl 204 tl 205 tl 206 1 2 3 tl 207 1 2 3 tl 208 c201 15 pf c 202 1 . 6 pf 1 2 3 tl 209 1 2 3 tl 210 c203 1 pf 1 2 3 tl 211 tl 212 tl 213 tl 214 tl 215 tl 216 tl 217 tl 218 c 204 10000000 pf c205 15 pf c206 1 . 6 pf c207 1 pf c 208 100000000 pf tl 219 c 209 100000000 pf 1 2 3 tl 220 tl 221 c 210 10000000 pf tl 222 1 2 3 tl 223 tl 224 tl 225 tl 226 r 201 100 ohm 1 2 3 tl 227 1 2 3 tl 228 1 2 3 tl 229 1 2 3 tl 230 1 2 3 tl 231 1 2 3 tl 232 1 2 3 tl 233 tl 234 tl 235 tl 236 tl 237 tl 238 tl 239 tl 240 tl 241 tl 242 tl 243 tl 244 tl 245 1 2 3 tl 246 tl 247 tl 248 tl 249 tl 250 tl 251 tl 252 tl 253 tl 254 tl 255 tl 256 c 2 6 0 2 0 2 f c _ b d o u t _ 0 9 - 1 3 - 2 0 1 2 rf_out drain_dut pin d1 drain_dut pin d2 r = 3 . 66 h = 30 mil ro / ro 4350
data sheet 6 of 9 rev. 03.3, 2016-06-21 ptfc260202fc reference circuit (cont.) reference circuit assembly diagram (not to scale) ro4350, .020 ( 61) c102 r 102 c101 c103 c104 c105 c106 c109 r 103 c 107 c 108 r 101 r 104 rf_in ptfc260202 f _in_02 c 2 6 0 2 0 2 f c _ c d _ 0 9 - 1 3 - 2 0 1 2 ptfc260202f_out_01 rf _out ro4350, .020 (105) c201 c205 c 202 c 210 c203 c206 c204 c207 r201 c208 c 209 v dd v dd v gs v gs
ptfc260202fc data sheet 7 of 9 rev. 03.3, 2016-06-21 components information component description suggested manufacturer p/n input c101, c105, c106, c109 chip capacitor, 15 pf atc atc800a150gt250x c102, c108 capacitor, 220000 pf digi-key 445-1814-2-nd c103, c107 chip capacitor, 10 f digi-key 587-1818-2-nd c104 chip capacitor, 1.2 pf atc atc800a1r2gt250x r101, r102 resistor, 10 w digi-key p10ect-nd r103, r104 resistor, 4.7 w digi-key p4.7ect-nd output c201, c205 chip capacitor, 15 pf atc atc800a150gt250x c202, c206 chip capacitor, 1.6 pf atc atc800a1r6bt250x c203, c207 chip capacitor, 1 pf atc atc800a1r0bt250x c204, c210 chip capacitor, 10 f digi-key 587-1818-2-nd c208, c209 capacitor, 100 f digi-key p5571-nd r201 resistor, 100 w digi-key cr11206t0100j reference circuit (cont.) reference circuit assembly dut ptfc260202fc test fixture part no. ltn/ptfc260202fc pcb rogers 4350, 0.508 mm [0.020] thick, 2 oz. copper, r = 3.66, ? = 2680 mhz find gerber fles for this test fxture on the infneon web site at http://www.infneon.com/rfpower pinout diagram (top view) lead connections for ptfc260202fc h - 37248 - 4 _pd _10 - 10 - 2012 s d1 d2 g1 g2 pin description d1 drain device 1 d2 drain device 2 g1 gate device 1 g2 gate device 2 s source (fange)
data sheet 8 of 9 rev. 03.3, 2016-06-21 ptfc260202fc package outline specifcations package h-37248-4 find the latest and most complete information about products and packaging at the infneon internet page http://www.infneon.com/rfpower diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d1, d2 C drains; g1, g2 C gates; s C source. 5. lead thickness: 0.10 + 0.076/C0.025 mm [0.004+0.003/C0.001 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch]. c l l c c l 2x 12 . 70 [. 500 ] 19. 810 . 20 [. 780 0 . 008 ] 4x 3.81 [. 150 ] lid 9. 40 [. 370 ] flange 9. 78 [. 385 ] 2 x 4.830 . 51 [. 190 0 . 020 ] 3. 76 0.25 [. 148 0.010 ] sph 1. 57 [. 062 ] 4x r0. 76 +0 . 13 - 0. 38 [ r . 030 +0.005 - 0 . 015 ] d1 d 2 g 1 g2 1. 02 [. 040 ] 20 . 57 [. 810 ] s 2x 45 x 2.72 [45 x . 107 ] (8.89 [. 350 ]) ( 5. 08 [. 200 ]) 19. 430.51 [. 765 0.020 ] h - 37248 - 4 _po _02 _01 - 09 - 2013 0 . 0381 [. 0015] - a -
data sheet 9 of 9 rev. 03.3, 2016-06-21 edition 2016-06-21 published by infneon technologies ag 85579 neubiberg, germany ? 2014 infneon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infneon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infneon technologies offce ( www.infneon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infneon technologies offce. infneon technologies components may be used in life-support devices or systems only with the express written approval of in - fneon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infneon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international ptfc260202fc v1 revision history revision date data sheet type page subjects (major changes since last revision) 01 2012-06-12 advance all data sheet refects advance specifcation for product development 02 2012-09-04 production all data sheet refects released product specifcation 03 2013-04-05 production 2 4 8 revised storage temperature range revised broadband impedance icon updated package outline 03.1 2013-11-20 production 1 revised min effciency in two-carrier wcdma specifcation table 03.2 2014-05-14 production 2 added operating voltage and revised juntion temperature in maximum ratings table 03.3 2016-06-21 production 1, 2 added esd rating and updated ordering information
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